Triode/MOS tube/transistor/module

Type: 2 P-channels, P-channel: Drain-source voltage (Vdss): -30V Continuous drain current (Id): -8.5A On-resistance (RDS(on)@Vgs,Id): 18mΩ@-10V, 25mΩ/@-4.5V , threshold voltage (Vgs(th)@Id): -1.0V to -2.5V VDS=VGS,ID=250μA

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NPN/PNP, Vceo=±50V, Ic=±0.15A

Silicon carbide MOS650V40mΩ

1200v/100a 2.3Vce

PNP, Vceo=-40V, Ic=-200mA

This NPN bipolar Darlington transistor is suitable for switching applications such as printing hammers, relays, solenoid valves, and lamp drivers. The device features a SOT-23 encapsulation and is suitable for low power surface mount applications.

Field effect transistor (MOSFET) N-channel, VDSS withstand voltage 30V, ID current 5.8A, RDON on-resistance 28mR@VGS 10V(MAX), VGS(th) turn-on voltage 0.7-1.4V,