Triode/MOS tube/transistor/module

Dual N-channel, 60V, 5A

N-channel, 600V, 8A

Transistor type: NPN Collector-emitter breakdown voltage (Vceo): 45V Collector current (Ic): 1A Power (Pd): 1.3W DC current gain (hFE@Ic,Vce): 100@150mA, 2V

Transistor Type: PNP Collector-Emitter Breakdown Voltage (Vceo): 45V Collector Current (Ic): 500mA Power (Pd): 300mW Collector Cutoff Current (Icbo): 100nA Collector-Emitter Saturation Voltage (VCE(sat) @Ic,Ib): 700mV@500mA, 50mA DC current gain (hFE@Ic,Vce): 250@100mA, 1V Characteristic frequency (fT): 100MHz Operating temperature: +150℃@(Tj)

Current collector IC: 200MA Collector base withstand voltage BVCBO(V): 60V