Triode/MOS tube/transistor/module

This N-channel MOSFET is designed for improving the overall power efficiency of DC/DC converters using synchronous or conventional switching PWM controllers. Targeted for low gate charge, low r

Automotive-grade power MOSFETs for low-voltage, high-speed switching applications in power supplies, converters, power motor control, and bridge circuits. AEC-Q101-qualified MOSFETs that meet the Production Part Approval Process (PPAP) for automotive applications.

Type: Dual N-Channel Drain-Source Voltage (Vdss): 60V Continuous Drain Current (Id): 8A Power (Pd): 83W On-Resistance (RDS(on)@Vgs,Id): 26mΩ@10V,15A Threshold Voltage (Vgs(th)@Id): 1.6V@250uA Gate charge (Qg@Vgs): 19nC@10V Input capacitance (Ciss@Vds): 0.98nF@30V, Vds=60V Id=8A Rds=26mΩ, operating temperature : -55℃~+150℃@(Tj)

Type PNP IC(A) -0.5 VCBO(V) -160 VCEO(V) -150 VEBO(V) -6 VCE(sat)(V) -0.5