Triode/MOS tube/transistor/module

N-channel, 55V, 49A, 17.5mΩ@10V

Configuration Single Type N-Ch VDS(V) 650 VGS(V) 30 ID(A)Max. 7 VGS(th)(v) 3 RDS(ON)(m?)@4.507V - Qg(nC)@4.5V - QgS(nC) 4 Qgd(nC) 3.6 Ciss(pF) 930 Coss(pF) 100 Crss(pF) 4.5

N channel

N-channel 100V 13.3mΩ@4.5V

This NPN bipolar transistor is suitable for linear and switching applications. The device features SC-59 encapsulation and is suitable for low power surface mount applications.

This P-channel MOSFET is produced using an advanced PowerTrench process optimized for rDS(on), switching performance and robustness.

NPN 100V 6A