Triode/MOS tube/transistor/module

NPN, Vceo=80V, Ic=700mA, hfe=180~390

NPN, Vceo=25V, Ic=1.5A, hfe=200~350, silk screen Y1

This N-channel logic level enhancement mode field effect transistor is produced using a high cell density DMOS proprietary technology. This very high-density process is ideal for minimizing on-resistance. This device is designed to replace digital transistors in low voltage applications. Because no bias resistor is required, this single N-channel FET can replace several digital transistors with various bias resistor values.

NPN 500V 1.5A

Darlington driver chip, high withstand voltage, high current, 500mA collector output current (single channel), input compatible with TTL/CMOS logic signal, electrostatic capacity: 8000V (HBM), widely used in relay drive

N-channel, 200V, 30A, 75mΩ@10V

-12V, P-Channel NexFET MOSFET™, Single LGA 0.6x0.7, 116mΩ 3-PICOSTAR -55 to 150