Triode/MOS tube/transistor/module

NPN,Vceo=25V,Ic=0.5A

6.8A, N-MOS

4NPN,50V,1.75A

This PNP bipolar power transistor is suitable for line-operated audio output amplifiers, switch-mode power drivers, and other switching applications.

The HGTD1N120BNS9A is based on a No Through Punch (NPT) IGBT design. This IGBT is suitable for a variety of high voltage switching applications operating at medium frequencies where low conduction losses are critical, such as UPS, solar inverters, motor control and power supplies.

Type: N-Channel Drain-Source Voltage (Vdss): 40V Continuous Drain Current (Id): 53A Power (Pd): 27W On-Resistance (RDS(on)@Vgs,Id): 6.5mΩ@10V,20A Threshold Voltage (Vgs(th)@Id): 1.6V@250uA Gate charge (Qg@Vgs): 15nC@10V Input capacitance (Ciss@Vds): 0.63nF@15V Operating temperature: -55℃~+150℃@(Tj ) DFN5*6encapsulation;