Triode/MOS tube/transistor/module

600V 25A

Current collector IC: 200MA Collector base withstand voltage BVCBO(V): 40V

Configuration Dual+ESD Type N-Ch VDS(V) 20 VGS(V) 12 ID(A)Max. 8 VGS(th)(v) 0.7 RDS(ON)(m?)@4.288V 17 Qg(nC)@ 4.5V 11.3 QgS(nC) 2.7 Qgd(nC) 3.5 Ciss(pF) 650 Coss(pF) 140 Crss(pF) 135

N and P channel

Transistor Type: NPN Collector-Emitter Breakdown Voltage (Vceo): 40V Collector Current (Ic): 600mA Power (Pd): 300mW Collector Cutoff Current (Icbo): 10nA Collector-Emitter Saturation Voltage (VCE(sat) @Ic, Ib): 1V@500mA, 50mA HFE: 100-300

NTD2955T4G Pin to PIN standard parameter Vth: 3.0

P-channel, -12V, -21A, 11mΩ@-4.5V

PNP, Vceo=-25V, Ic=-500mA, hfe=144~202