Triode/MOS tube/transistor/module
Ultra high voltage MOS tube
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TECH PUBLIC (Taizhou)
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Compliant with VTH: 3.0 standard STD10PF06
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NCE (Wuxi New Clean Energy)
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ST (STMicroelectronics)
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HXY MOSFET (Huaxuanyang Electronics)
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Ruichips (Ruijun Semiconductor)
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N-channel, 85V, 90A
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Ultra high voltage MOS tube
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NCE (Wuxi New Clean Energy)
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Infineon (Infineon)
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The seven NPN Darlington junction transistors in these arrays are ideal for driving lamps, relays or printing hammers in a variety of industrial and consumer applications. Its high breakdown voltage and internal suppression diodes ensure that inductive loads will not be a problem. The peak inrush current of up to 500 mA enables it to drive incandescent lamps. The ULx2003A with a 2.7 kΩ series input resistor is suitable for systems using 5.0 V TTL or CMOS logic.
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Type N VDS(V) 30V VGS(V) ±20V Vth(V) 1.5V RDS(ON)(mΩ) 5.5mΩ ID(A) 100A
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