Triode/MOS tube/transistor/module

These P-channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary high cell density DMOS technology. This very high-density process is ideal for minimizing on-resistance. These devices are ideal for low-voltage applications such as notebook computer power management, portable electronics, and other battery-powered circuits, where fast high-side switching and low in-line power losses are required in very small surface-mount encapsulations.

N-channel, 800V, 6A, 2Ω@10V

This NPN bipolar transistor is suitable for linear and switching applications. The device features a SOT-23 encapsulation and is suitable for low power surface mount applications.

NPN,150V,1A

N+P channel, 30V, 8A, 18mΩ@10V; -30V, -8A, 32mΩ@-10V

NPN, Vceo=700V, Ic=4A

BC847AW-F2-0000HF

N-channel 650V 4A

N-channel, 300V, 16A, 130mΩ@10V

N-channel, 60V, 18A

P channel -30V -3.4A