Triode/MOS tube/transistor/module

Produced using an advanced PowerTrench process, this P-channel MOSFET is optimized for rDS(on), switching performance, and robustness.

Semiconductor transistor field effect transistor MOS tube, TO-220, P channel, withstand voltage: -60V, current: -90A, 10V internal resistance (Max): 0.01Ω, 4.5V internal resistance (Max): 0.012Ω, power: 200W

HFE:>68

N channel

NPN, Vceo=45V, Ic=0.1A, hfe=420~800, silk screen 1G

N-channel, 600V, 21A, 0.15Ω@10V

Low saturation voltage bipolar transistors are miniature surface mount devices with ultra-low saturation voltage and high current gain capability. These devices are designed for low-voltage, high-speed switching applications that require cost-effective, efficient energy control.