Triode/MOS tube/transistor/module

NPN, Vceo=400V, Ic=200mA, hfe=20~25

This PNP bipolar transistor is suitable for linear and switching applications. The device features a SOT-23 encapsulation and is suitable for low power surface mount applications.

VCES(V) 1200 IC(A)@117℃ 25 VCE(sat)(V) 2 E(off)(mj) 0.32 Vf(V) 3.1

N-channel 30V 5.8A