Triode/MOS tube/transistor/module

Type: Dual N-Channel@@Drain-Source Voltage (Vdss): 40V@@Continuous Drain Current (Id): 13A@@Power (Pd): 2.5W@@On Resistance (RDS(on)@Vgs,Id ): 19mΩ@10V, 6A@@Threshold voltage (Vgs(th)@Id): 2V@250uA

PNP, Vcc=-50V, Ic=-500mA, Pd=200mW

This N-Channel MV MOSFET is produced using ON Semiconductor's advanced PowerTrench process which incorporates Shielded Gate technology. This process has been optimized to minimize on-resistance while maintaining excellent switching performance with the industry's best soft body diode.

This 15A, 80 V, PNP bipolar power transistor is suitable for general purpose amplifier and switching applications. 2N6487, 2N6488 (NPN); and 2N6490, 2N6491 (PNP) are complementary devices.

Transistor Type: PNP Collector-Emitter Breakdown Voltage (Vceo): 60V Collector Current (Ic): 600mA Power (Pd): 250mW Collector Cutoff Current (Icbo): 20nA Collector-Emitter Saturation Voltage (VCE(sat) @Ic,Ib): 1.6V@500mA, 50mA DC current gain (hFE@Ic,Vce): 100@150mA, 10V Characteristic frequency (fT): 200MHz Operating temperature: +150℃@(Tj)