Triode/MOS tube/transistor/module

Configuration Single Type N-Ch VDS(V) 40 VGS(V) 20 ID(A)Max. 170 VGS(th)(v) 1.8 RDS(ON)(m?)@4.484V - Qg(nC)@4.5V 45 QgS(nC) 12 Qgd(nC) 18 Ciss(pF) 3950 Coss(pF) 1120 Crss(pF) 98

The MJW18020 planar high voltage power transistor is specifically designed for motor control applications, high power supplies and UPS, where high reproducibility of DC and switching parameters minimizes dead time in bridge configurations.

N-channel, 75V, 31A, 15.9mΩ@4.5V

Type N Drain-Source Voltage (Vdss) 30 Threshold Voltage (Vgs) 20 Continuous Drain Current (Id) 9.2 On-Resistance (mΩ) 10.8 Input Capacitance (Ciss) 455 Reverse Transfer Capacitance Crss (pF) 22 Gate Charge (Qg ) 8

N-channel, 60V, 0.34A, 5.3Ω@4.5V

Four-quadrant triac 16A/800V, plastic metal inner insulation encapsulation

This family of digital transistors is intended to replace a single device and its external resistor bias network. The bias resistor transistor (BRT) consists of a transistor and a monolithic bias network consisting of two resistors: a series base resistor and a base emitter resistor. The BRT eliminates the need for these separate components by integrating them into a single device. Using BRT can reduce system cost and save board space.

Automotive Power MOSFETs for compact and efficient designs with 5x6mm LFPAK encapsulation and high thermal performance. AEC-Q101 qualified MOSFETs and Production Part Approval Process (PPAP) compliant for automotive applications requiring higher board-level reliability.