Triode/MOS tube/transistor/module

N-Channel NexFET™ Power MOSFET 8-VSONP -55 to 150

Small Signal MOSFET, 20 V, 238 mA, Single N-Channel, Gate ESD Protected

100V 50A N-channel 18mΩ@10V TO-252

PNP Vceo=-50V Ic=-0.1A PC=0.2W R1=47K

Configuration Single Type N-Ch VDS(V) 30 VGS(V) 20 ID(A)Max. 7 VGS(th)(v) 1 RDS(ON)(m?)@4.104V 23 Qg(nC)@4.5V 8 QgS(nC) 0.7 Qgd(nC) 1.5 Ciss(pF) 360 Coss(pF) 80 Crss(pF) 55

N and P channel

These dual N-channel logic level enhancement mode field effect transistors are produced using a high cell density DMOS proprietary technology. This very high-density process is ideal for minimizing on-resistance. This device is suitable for replacing digital transistors in load switching applications in low voltage applications. Since no bias resistor is required, these N-channel FETs can replace several digital transistors with various bias resistors, such as the IMHxA series.