Triode/MOS tube/transistor/module

Semiconductor transistor field effect transistor MOS tube, DFN-8 3.3*3.3, N channel, withstand voltage: 40V, current: 30A, 10V internal resistance (Max): 0.014Ω, 4.5V internal resistance (Max): 0.016Ω, power : 30W

NPN, Vceo=160V, Ic=600mA

30v N channel

N-channel, 100V, 17A, 100mΩ@10V

Type: N+P channel, N channel: Drain-source voltage (Vdss): 60V Continuous drain current (Id): 4.8A On-resistance (RDS(on)@Vgs,Id): 65mΩ@10V, 75mΩ@4.5 V, threshold voltage (Vgs(th)@Id): 1.2V to 2.5V VDS=VGS,ID=250μA, P circuit: Drain-source voltage (Vdss): -60V Continuous drain current (Id): -3.7A On-resistance (RDS(on)@Vgs,Id): 75mΩ@10V, 90mΩ@4.5V, Threshold voltage (Vgs(th)@Id): 1.2V to 2.5V VDS=VGS,ID=250μA,

PNP, Vcc=50V, Ic=100mA