Triode/MOS tube/transistor/module

Gear: 250-600

Configuration Dual Type N-Ch VDS(V) 40 VGS(V) 20 ID(A)Max. 4.4 VGS(th)(v) 1.5 RDS(ON)(m?)@4.119V 40 Qg(nC)@4.5V 5 QgS(nC) 1.5 Qgd(nC) 1.84 Ciss(pF) 452 Coss(pF) 51 Crss(pF) 38

YJL3139KDW-F2-0000HF

This N-channel MOSFET is designed to increase the overall efficiency and minimize the switching node noise of DC/DC converters, and can be used with synchronous or conventional switching PWM controllers. It is optimized for low gate charge, low RDS(ON), fast switching and body diode reverse recovery.

TPS1101 Single P-Channel Enhancement-Mode MOSFET

N-channel, 150V, 17A, 95mΩ@10V

Semiconductor transistor field effect transistor MOS tube, TO-252, N channel, withstand voltage: 30V, current: 80A, 10V internal resistance (Max): 0.005Ω, 4.5V internal resistance (Max): 0.0075Ω, power: 90W