Triode/MOS tube/transistor/module
80V, 1A NPN medium power transistor, can replace other brand BCP56 triode, magnification 100~250
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Configuration Single Type N-Ch VDS(V) 400 VGS(V) 25 ID(A)Max. 10 VGS(th)(v) - RDS(ON)(m?)@4.409V - Qg(nC)@4.5V - QgS(nC) 4 Qgd(nC) 10.5 Ciss(pF) 740 Coss(pF) 83 Crss(pF) 9
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This NPN bipolar Darlington transistor is suitable for switching applications such as printing hammers, relays, solenoid valves, and lamp drivers. The device features a SOT-223 encapsulation and is suitable for medium power surface mount applications.
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GOFORD (valley peak)
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SUPERFET III MOSFETs are ON Semiconductor's new family of high-voltage super-junction (SJ) MOSFETs that utilize charge-balancing technology to achieve exceptionally low on-resistance and excellent performance in terms of lower gate charge. This advanced technology is designed to minimize conduction losses, provide excellent switching performance, and can withstand extreme dv/dt rates. Therefore, the SUPERFET III MOSFET Easy drive family helps manage EMI issues for easier design implementation.
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Infineon (Infineon)
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SPTECH (Shenzhen Quality Super)
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PNP 200W -80V -25A Applications: Designed for general power amplifier and switching applications
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NCE (Wuxi New Clean Energy)
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YANGJIE (Yang Jie)
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CJ (Jiangsu Changdian/Changjing)
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NPN, Vceo=30V, Ic=1.5A, hfe=160~320
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LRC (Leshan Radio)
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Cmos (Guangdong Field Effect Semiconductor)
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UMW (Friends Taiwan Semiconductor)
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