Triode/MOS tube/transistor/module

Type: N-Channel Drain-Source Voltage (Vdss): 40V Continuous Drain Current (Id): 72A Power (Pd): 27W On-Resistance (RDS(on)@Vgs,Id): 5.3mΩ@10V,20A Threshold Voltage (Vgs(th)@Id): 1.6V@250uA Gate charge (Qg@Vgs): 27nC@10V Input capacitance (Ciss@Vds): 1.15nF@15V Operating temperature: -55℃~+150℃@(Tj )

N-channel, 60V, 13.5m²@10V, 55A

Transistor type: 1 NPN, 1 PNP Collector-emitter breakdown voltage (Vceo): 40V Collector current (Ic): 200mA Power (Pd): 200mW Collector cut-off current (Icbo): 50nA Collector-emitter saturation Voltage (VCE(sat)@Ic,Ib): 300mV@50mA, 5mA; 400mV@50mA, 5mA DC Current Gain (hFE@Ic,Vce): 100@10mA, 1V Characteristic Frequency (fT) 300MHz; 250MHz Operating Temperature+ 150℃@(Tj)