Triode/MOS tube/transistor/module

These N-Channel Power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest on-state resistance per silicon area, resulting in outstanding performance. The device is capable of withstanding high energy in avalanche mode and the diode has extremely low reverse recovery time and stored charge. The device is designed for applications where energy efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products. The previous development type was TA75344.

Automotive Power MOSFETs for compact and efficient designs with 3x3mm flat lead encapsulation and high thermal performance. Wettable flank options available for enhanced optical detection. AEC-Q101 qualified MOSFETs and Production Part Approval Process (PPAP) compliant for automotive applications.