onsemi (Ansemi)

TO-220AB-3

Tube

800

These N-Channel Power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest on-state resistance per silicon area, resulting in outstanding performance. The device is capable of withstanding high energy in avalanche mode and the diode has extremely low reverse recovery time and stored charge. The device is designed for applications where energy efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products. The previous development type was TA75344.