Triode/MOS tube/transistor/module
These P-Channel Logic Level Rated MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process, which is specially tailored to minimize on-state resistance and maintain low gate charge for superior switching performance. These devices are ideal for portable electronics applications: load switching and power management, battery charging and protection circuits.
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SUPERFET III MOSFETs are ON Semiconductor's new family of high-voltage super-junction (SJ) MOSFETs utilizing charge-balancing technology to achieve exceptionally low on-resistance and superior performance in terms of lower gate charge. This advanced technology is designed to minimize conduction losses, provide excellent switching performance, and can withstand extreme dv/dt rates. Therefore, the SUPERFET III MOSFET Easy drive family helps manage EMI issues for easier design implementation.
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ALLEGRO (American Egoro)
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TI (Texas Instruments)
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TOSHIBA (Toshiba)
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These N-channel enhancement mode field effect transistors are produced using a high cell density DMOS proprietary technology. This very high-density process is ideally suited to minimize on-resistance and provide excellent switching performance. These products are ideal for low-voltage, low-current applications such as notebook computer power management, battery-powered circuits, and DC motor control.
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FUXINSEMI (Fuxin Senmei)
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SINO-IC (Coslight Core)
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Convert Semiconductor
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DIODES (US and Taiwan)
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This complementary dual device uses a small encapsulation (2 x 2 mm) and low RDS(on) MOSFETs to achieve the smallest footprint and improve circuit efficiency. The low RDS(on) performance is ideal for single-cell or dual-cell Li-ion battery powered devices such as cell phones, media players, digital cameras and PDAs.
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NCE (Wuxi New Clean Energy)
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Infineon (Infineon)
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