Triode/MOS tube/transistor/module

IGBT module

The ISL9V3040D3ST-F085C and ISL9V3040S3ST-F085C offer superior SCIS capability in space-saving D-Pak (TO-252), as well as industry standard D2-Pak (TO-263) plastic encapsulation. This device is suitable for use in automotive ignition circuits, especially as a coil driver. Internal diodes provide voltage clamping without external components. EcoSPARK devices can be customized for specific clamping voltages. For more information, please contact the nearest ON Semiconductor sales office. The previous development type was 49362.

Industrial power MOSFETs for compact and efficient designs with 5x6 mm flat lead encapsulation and high thermal performance.

This N-Channel MV MOSFET is produced using ON Semiconductor's advanced Power Trench process which incorporates Shielded Gate technology. This process has been optimized to minimize on-resistance while maintaining excellent switching performance with the industry's best soft body diode.