Triode/MOS tube/transistor/module

Configuration Single Type P-Ch VDS(V) -40 VGS(V) 20 ID(A)Max. -4.3 VGS(th)(v) -1.5 RDS(ON)(m?)@4.97V 98 Qg(nC) @4.5V 14 QgS(nC) 2.9 Qgd(nC) 3.8 Ciss(pF) 650 Coss(pF) 90 Crss(pF) 70

N channel

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N-channel Drain-source voltage (Vdss): 100V Continuous drain current (Id): 45A Power (Pd): 72W On-resistance (RDS(on)Max@Vgs,Id): 17mΩ@10V, 20A

MMBT3904T-F2-0000HF

N-channel, Vces=900V, Ic=28A, Vce(on)=2.25V

N-channel, Vces=900V, Ic=28A, Vce(on)=2.25V

This power MOSFET is suitable for withstanding high energy in avalanche and commutation modes. These devices are designed for low-voltage, high-speed switching applications in power supplies, converters, and power-motor control, especially in bridge circuits where diode speed and commutation safe operating regions are critical, providing additional safety against unintended transient voltages margin.