Triode/MOS tube/transistor/module

N channel

N-channel, 700V, 0.80?@10V, 10A

Transistor type: PNP Collector-emitter breakdown voltage (Vceo): 25V Collector current (Ic): 1.5A Power (Pd): 300mW DC current gain (hFE@Ic,Vce): 120@100mA, 1V L range 120- 200 PNP, Vceo=-25V, Ic=-1.5A, hfe=120~200

NPN,Vceo=45V,Ic=100mA

Type: P-channel Drain-source voltage (Vdss): 30V Continuous Drain current (Id): 120A Power (Pd): 62W On-resistance (RDS(on)@Vgs,Id: 4.9mΩ@10V, 20A Threshold voltage ( Vgs(th)@Id): 1.6V@250uA Gate charge (Qg@Vgs): 40nC@10V Input capacitance (Ciss@Vds): 2.35pF@15V, Vds=30v Id=120A Rds=4.9mΩ, operating temperature : -55℃~+150℃@(Tj)

These N- and P-channel 2.5V specified MOSFETs are produced using the advanced PowerTrench process, which is specially adapted to minimize on-resistance while maintaining low gate charge for excellent switching performance. Suitable for applications where more expensive SO-8 and TSSOP-8 encapsulations are not possible, these devices offer superior power dissipation in a very small footprint.