Triode/MOS tube/transistor/module

Field Effect Transistor (MOSFET) Type: P-Channel Drain-Source Voltage (Vdss): 40V Continuous Drain Current (Id): 50A Power (Pd): 55W On-Resistance (RDS(on)@Vgs,Id): 8.9mΩ @10V,16A Threshold Voltage (Vgs(th)@Id): 1.6V@250uA Gate Charge (Qg@Vgs): 28nC@10V Input Capacitance (Ciss@Vds): 3.05nF@20V ,Vds=40V Id=50A Rds=8.9mΩ, working temperature: -55℃~+150℃@(Tj)

PNP, Vceo=-305V, Ic=-200mA, hfe=100~300

N-channel 60V 2.8A

Type N VDSS(V) 30 VGS(V) 20 VTH(V) 1 IDS72°C(A) 6.8 RDS(Max) 36 PD72°C(W) 2.8

SuperFET II MOSFETs are a new family of high-voltage super-junction (SJ) MOSFETs that utilize charge-balancing technology to achieve exceptionally low on-resistance and excellent performance in terms of lower gate charge. This technology is specifically designed to minimize conduction losses, providing excellent switching performance, dv/dt rate and higher avalanche energy. Therefore, SuperFET II MOSFETs are ideal for switching power supply applications such as PFC, server/telecom power supplies, FPD TV power supplies, ATX power supplies, and industrial power supply applications.

NPN, Vceo=40V, Ic=600mA, hfe=40~300

N+P channel, 30V, 2.7A+2A