Triode/MOS tube/transistor/module

20V N+N channel MOS

N-channel, 600V, 9.7A, 0.38Ω@10V

N-channel, 600V, 10A, 0.8Ω

This bipolar power transistor is suitable for low voltage, low power and high gain audio amplifier applications. The MJE200 (NPN) and MJE210 (PNP) are complementary devices.

PNP, 80V, 8A

MOSFET Type N Drain-Source Voltage (Vdss) (V) 60 Threshold Voltage VGS ±20 Vth(V) 1-2.5 On-Resistance RDS(ON) (mΩ) 14/18 Continuous Drain Current ID (A) 9

Ultra high voltage MOS tube