Triode/MOS tube/transistor/module

This is a 30 V N-channel power MOSFET.

Field Effect Transistor (MOSFET) Type: N-Channel Drain-Source Voltage (Vdss): 150V Continuous Drain Current (Id): 160A Power (Pd): 250W On-Resistance (RDS(on)@Vgs,Id): 6.3mΩ @10V,20A Threshold Voltage (Vgs(th)@Id): 2.8V@250uA Gate Charge (Qg@Vgs): 19nC@10V Input Capacitance (Ciss@Vds): 5.025nF@75V Operating Temperature: -55℃~ +150℃@(Tj)

N-channel, 30V, 3.6A, 50mΩ@10V

Power MOSFET, 40V, 130 A, 2.5 mΩ, Single N-Channel

Type(N)/ESD(Y)/VDS60(V)/VGS20(±V)/VGS(th)1(V)/ID0.3(A)

Vces=1000V, Ic=60A, Vce(sat)=2.5V This is a new model with no difference from FGL60N100BNTD

N-channel, 30V, 4A, 55mΩ@4.5V

This NPN bipolar transistor is suitable for linear and switching applications. The device features a SOT-23 encapsulation and is suitable for low power surface mount applications.