Triode/MOS tube/transistor/module

Type: N-Channel Drain-Source Voltage (Vdss): 30V Continuous Drain Current (Id): 90A Power (Pd): 105W On-Resistance (RDS(on)@Vgs,Id): 70mΩ@10V, Threshold Voltage (Vgs (th)@Id): 1.0V@250μA

N-Channel NexFET™ Power MOSFET 8-VSON-CLIP -55 to 150

Configuration Single Type N-Ch VDS(V) 60 VGS(V) 20 ID(A)Max. 50 VGS(th)(v) 1.6 RDS(ON)(m?)@4.161V 19 Qg(nC)@4.5V - QgS(nC) 6.4 Qgd(nC) 9.6 Ciss(pF) 2100 Coss(pF) 140 Crss(pF) 100

Technical Documentation and Design Resources Simulation Models (3) Encapsulation Drawings (1) Data Sheets (1)

N-CH, VDS=60V, Rds(on)=10mohm, ID=66A

P-channel, 30V, 30A.