Triode/MOS tube/transistor/module

Type: One N-Channel One P-Channel Drain-Source Voltage (Vdss): 60V Continuous Drain Current (Id): 30A/-25A Power (Pd): 35W On-Resistance (RDS(on)@Vgs,Id): 27mΩ@10V,6A; 53mΩ@-10V,-15A Threshold voltage (Vgs(th)@Id): 1.8V@250uA;-1.7V@250uA Gate charge (Qg@Vgs): 19nC@10V;25nC@- 10V input capacitance (Ciss@Vds): 0.916nF@30V; 1.2nF@-30V Operating temperature: -55℃~+150℃@(Tj)

RF Transistor NPN

N-channel, 120V, 80A, 0.013Ω@10V