Triode/MOS tube/transistor/module

transistors,PNP 40V 200mA 200mW,SOT-23

NPN, Vceo=25V, Ic=800mA, hfe=160~300

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Configuration Single Type N-Ch VDS(V) 30 VGS(V) 20 ID(A)Max. 70 VGS(th)(v) 1.5 RDS(ON)(m?)@4.360V 8 Qg(nC)@4.5V 20 QgS(nC) 7.6 Qgd(nC) 7.2 Ciss(pF) 2100 Coss(pF) 550 Crss(pF) 180

P channel

Gallium Nitride GaN 650V Power Transistor(FET)

Gallium Nitride GaN 650V Power Transistor(FET)