Triode/MOS tube/transistor/module

Collector-base reverse breakdown voltage 700V, collector-emitter reverse breakdown voltage 400V, amplification factor 8-40, collector current IC4A

Configuration Dual+ESD Type N-Ch VDS(V) 20 VGS(V) 12 ID(A)Max. 7 VGS(th)(v) 0.7 RDS(ON)(m?)@4.263V 15 Qg(nC)@ 4.5V 16 QgS(nC) 4.2 Qgd(nC) 2.6 Ciss(pF) 1292 Coss(pF) 163 Crss(pF) 85

NPN, Vceo=25V, Ic=1.5A, hfe=160~300

PNP, Vceo=-300V, Ic=-500mA, hfe=80~200