Triode/MOS tube/transistor/module

Transistor Type: PNP Collector-Emitter Breakdown Voltage (Vceo): 45V Collector Current (Ic): 500mA Power (Pd): 300mW Collector Cutoff Current (Icbo): 100nA Collector-Emitter Saturation Voltage (VCE(sat) @Ic,Ib): 700mV@500mA, 50mA DC current gain (hFE@Ic,Vce): 160@100mA, 1V Characteristic frequency (fT): 100MHz Operating temperature: +150℃@(Tj)

PNP, Vceo=-40V, Ic=-1A

Power FET

Type: P-Channel Drain-Source Voltage (Vdss): 40V Continuous Drain Current (Id): 70A Power (Pd): 113W On-Resistance (RDS(on)@Vgs,Id): 7.0mΩ@10V,12A Threshold Voltage (Vgs(th)@Id): 1.6V@250uA Gate charge (Qg@Vgs): 150nC@10V Input capacitance (Ciss@Vds): 6.5nF@20V Operating temperature: -55℃~+150℃@(Tj )

P channel -30V -4.2A

This N-channel MOSFET is produced using an advanced Power Trench process optimized for rDS(on), switching performance and robustness.

N-Channel 70V 0.1A 1.0W