Triode/MOS tube/transistor/module

Field effect transistor (MOSFET) N-channel, VDSS withstand voltage 100V, ID current 20A, RDON on-resistance 70mR@VGS 10V(MAX), VGS(th) turn-on voltage 1.2-2.5V,

Field effect transistor (MOSFET) P-channel, VDSS withstand voltage 60V, ID current 20A, RDON on-resistance 72mR@VGS 10V(MAX), VGS(th) turn-on voltage 1.0-2.5V,

Field effect transistor (MOSFET) Type: N-channel Drain-source voltage (Vdss): 100V Continuous drain current (Id): 20A On-resistance (RDS(on)@Vgs,Id): 70mΩ@10V, 5A

Field effect transistor (MOSFET) Type: P channel Drain-source voltage (Vdss): 60V Continuous drain current (Id): 50A On-resistance (RDS(on)@Vgs,Id): 24mΩ@10V, 18A

Field effect transistor (MOSFET) Type: N-channel Drain-source voltage (Vdss): 30V Continuous drain current (Id): 100A On-resistance (RDS(on)@Vgs,Id): 5.5mΩ@10V, 30A

Field effect transistor (MOSFET) N-channel, VDSS withstand voltage 60V, ID current 50A, RDON on-resistance 15mR@VGS 10V(MAX), VGS(th) turn-on voltage 1.2-2.5V,

Field effect transistor (MOSFET) N-channel, VDSS withstand voltage 100V, ID current 15A, RDON on-resistance 115mR@VGS 10V(MAX), VGS(th) turn-on voltage 1.0-2.5V,

Field effect transistor (MOSFET) N+N channel, VDSS withstand voltage 30V, ID current 30A, RDON on-resistance 12mR@VGS 10V(MAX), VGS(th) turn-on voltage 1.2-2.5V,

Field effect transistor (MOSFET) P-channel, VDSS withstand voltage 60V, ID current 20A, RDON on-resistance 85mR@VGS 10V(MAX), VGS(th) turn-on voltage 1.2-2.5V,

Field effect transistor (MOSFET) N+P channel, N: VDSS withstand voltage 40V, ID current 30A, RDON on-resistance 27mR@VGS 10V(MAX), VGS(th) turn-on voltage 1-2.5V, P: VDSS withstand Voltage 40V, ID current 20A, RDON on-resistance 42mR@VGS 10V(MAX), VGS(th) turn-on voltage 1-2.5V,

Field effect transistor (MOSFET) P-channel, VDSS withstand voltage 30V, ID current 50A, RDON on-resistance 13mR@VGS 10V(MAX), VGS(th) turn-on voltage 1.2-2.5V,

Field effect transistor (MOSFET) type: P-channel drain-source voltage (Vdss): 18V continuous drain current (Id): 6.5A power (Pd): 2W on-resistance (RDS(on)@Vgs,Id): 28mΩ @4.5V,4.1A

Field effect transistor (MOSFET) P-channel, VDSS withstand voltage 60V, ID current 2A, RDON on-resistance 160mR@VGS 10V(MAX), VGS(th) turn-on voltage 1.4-2.6V,

This high current PNP bipolar transistor is suitable for industrial and consumer applications. The device features a SOT-223 encapsulation and is suitable for medium power surface mount applications.