Triode/MOS tube/transistor/module

N-channel, 55V, 75A, 8mΩ@10V

N-channel, VDSS withstand voltage 30V, ID current 5.7A, RDON on-resistance 28mR@VGS 10V(MAX), VGS(th) turn-on voltage 0.7-1.4V,

Field effect transistor (MOSFET) N-channel, VDSS withstand voltage 30V, ID current 15A, RDON on-resistance 9mR@VGS 10V(MAX), VGS(th) turn-on voltage 1.2-2.5V,

Darlington transistor array on-state input voltage (VI(on)@Vce,Ic): 3V@2V, 300mA collector-emitter saturation voltage drop (VCE(sat)@Ii,Ic): 900mV on-state input current (Ii@ Vi): [email protected]

Darlington transistor array Monolithically integrated high withstand voltage, high current Darlington transistor array, the circuit contains eight independent Darlington transistor drive circuits. There are clamping diodes inside the circuit, VIN(ON) input voltage: 50V, input current Ic: 500mA

Field effect transistor (MOSFET) type: 2 N-channel drain-source voltage (Vdss): 60V continuous drain current (Id): 6.5A power (Pd): 2.1W on-resistance (RDS(on)@Vgs,Id ): 36mΩ@10V, 6A

Field Effect Transistor (MOSFET) Type: P-Channel Drain-Source Voltage (Vdss): 40V Continuous Drain Current (Id): 13A Power (Pd): 3W On-Resistance (RDS(on)@Vgs,Id): 19mΩ@ 10V

Field Effect Transistor (MOSFET) Type: N-Channel Drain-Source Voltage (Vdss): 30V Continuous Drain Current (Id): 8.5A Power (Pd): 1.5W On-Resistance (RDS(on)@Vgs,Id): 18mΩ@10V,7A

Field effect transistor (MOSFET) type: P-channel drain-source voltage (Vdss): 18V continuous drain current (Id): 6.5A power (Pd): 2W on-resistance (RDS(on)@Vgs,Id): 28mΩ @4.5V,4.1A

Field effect transistor (MOSFET) Type: N-channel Drain-source voltage (Vdss): 30V Continuous drain current (Id): 120A On-resistance (RDS(on)@Vgs,Id): 3.8mΩ@10V, 20A

Field effect transistor (MOSFET) Type: P channel Drain-source voltage (Vdss): 60V Continuous drain current (Id): 20A On-resistance (RDS(on)@Vgs,Id): 72mΩ@10V,10A

Field effect transistor (MOSFET) Type: P channel Drain-source voltage (Vdss): 60V Continuous drain current (Id): 10A On-resistance (RDS(on)@Vgs,Id): 120mΩ@10V, 3A

Field effect transistor (MOSFET) Type: P channel Drain-source voltage (Vdss): 40V Continuous drain current (Id): 25A On-resistance (RDS(on)@Vgs,Id): 44mΩ@10V, 8A

Field effect transistor (MOSFET) Type: P channel Drain-source voltage (Vdss): 60V Continuous drain current (Id): 10A On-resistance (RDS(on)@Vgs,Id): 120mΩ@10V, 3A