Triode/MOS tube/transistor/module

This dual P-channel MOSFET is designed using an advanced Power Trench process to optimize rDS(on)@VGS = –1.5 V.

Transistor Type: NPN Collector-Emitter Breakdown Voltage (Vceo): 45V Collector Current (Ic): 500mA Power (Pd): 300mW Collector Cutoff Current (Icbo): 100nA Collector-Emitter Saturation Voltage (VCE(sat) @Ic,Ib): 700mV@500mA, 50mA DC current gain (hFE@Ic,Vce): 100@100mA, 1V Characteristic frequency (fT): 100MHz Operating temperature: -55℃~+150℃@(Tj)

MOS

ON Semiconductor's new Field Stop Gen 2 IGBT series features novel field stop IGBT technology for applications such as solar inverters, UPS, welding machines, telecom, ESS, and PFC where low conduction and switching losses are critical.

40V 40A P-channel 13.5mΩ@10V TO-252

N-channel 800V 3A

This N-channel MOSFET is produced using an advanced Power Trench process optimized for rDS(on), switching performance and robustness.

NPN