Triode/MOS tube/transistor/module

IGBT module

Transistor Type: NPN Collector-Emitter Breakdown Voltage (Vceo): 65V Collector Current (Ic): 100mA Power (Pd): 200mW Collector Cutoff Current (Icbo): 100nA Collector-Emitter Saturation Voltage (VCE(sat) @Ic,Ib): 500mV@100mA, 5mA DC current gain (hFE@Ic,Vce): 110@2mA, 5V Characteristic frequency (fT): 100MHz Operating temperature: +150℃@(Tj) 110-220

VDMOS single tube

Type P VDSS(V) -30 ID@TC=43?C(A) -4 PD@TC=43?C(W) 0.75 VGS(V) ±20 RDS(on)(m?)Max.@TC= 25?C VGS=4.23V 86

N channel

PNP, Vceo=-60V, Ic=-600mA

MOS, TO-220, N-channel, 100V, 30A, 33mΩ (Max), 145W