Triode/MOS tube/transistor/module

HFE:100-250

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Transistor type: NPN, collector-emitter breakdown voltage (Vceo): 50V collector current (Ic): 100mA R1=47K R2=47K

Field effect transistor (MOSFET) N-channel VDSS:30V ID:8A

PNP

This NPN bipolar transistor is suitable for linear and switching applications. The device features a SOT-23 encapsulation and is suitable for low power surface mount applications.

Type: N-Channel Drain-Source Voltage (Vdss): 40V Continuous Drain Current (Id): 220A Power (Pd): 200W On-Resistance (RDS(on)@Vgs,Id): 1.8mΩ@10V,60A Threshold Voltage (Vgs(th)@Id): 1.5V@250uA Gate Charge (Qg@Vgs): 134.2nC@10V Input Capacitance (Ciss@Vds): 5.755nF@25V Operating Temperature: -55℃~+150℃@( Tj)