Triode/MOS tube/transistor/module

This N-channel enhancement mode MOSFET is produced using a patented high cell density DMOS technology. This product minimizes on-resistance while providing robust, reliable and fast switching performance. It can be used in most applications requiring up to 500 mA DC. These products are especially suitable for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers and other switching applications.

This family of digital transistors is intended to replace a single device and its external resistor bias network. The bias resistor transistor (BRT) consists of a transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT integrates these components into one device, eliminating the need for these external components. Using BRT can reduce system cost and save board space.

This P-channel enhancement mode power MOSFET is produced using planar stripe and DMOS proprietary technology. This advanced MOSFET technology is designed for low on-resistance, excellent switching performance and high avalanche energy strength. These devices are suitable for switch mode power supplies, audio amplifiers, DC motor control and variable switching power supply applications.

P-channel, low-voltage MOSFETs