Triode/MOS tube/transistor/module

MOSFET Type P Drain-Source Voltage (Vdss) (V) -30 Threshold Voltage VGS ±20 Vth(V) 0.8-2 On-Resistance RDS(ON) (mΩ) 7/10 Continuous Drain Current ID (A) 70

N-channel 950V 9A

P channel -30V -90A, 4.8mΩ on-resistance

NPN 80V 1A

This N-channel MOSFET is produced using an advanced Power Trench process optimized for rDS(on), switching performance and robustness.

P-channel, -30V, -2.2A

N+P dual channel.40V.30A.16mΩ/-40V.-20A.30mΩ

This family of digital transistors is intended to replace a single device and its external resistor bias network. The bias resistor transistor (BRT) consists of a transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT integrates these components into one device, eliminating the need for these external components. Using BRT can reduce system cost and save board space.

N-channel, 20V, 4A