Triode/MOS tube/transistor/module

This Insulated Gate Bipolar Transistor (IGBT) utilizes a durable and cost-effective Super Field Stop Trench structure to provide excellent performance in demanding switching applications, along with low on-state voltage and lowest switching losses. The IGBT is ideal for UPS and solar applications. The device combines a soft and fast co-encapsulation freewheeling diode with low forward voltage.

This PNP bipolar transistor is suitable for linear and switching applications. The device features a SOT-23 encapsulation and is suitable for low power surface mount applications.

P-channel, -100V, -23A, 117mΩ@-10V

Low saturation voltage bipolar transistors are miniature surface mount devices with ultra-low saturation voltage and high current gain capability. These devices are designed for low-voltage, high-speed switching applications that require cost-effective, efficient energy control.

N-channel 100V 17A

N-channel, 30V, 24A, 2.8mΩ@10V

PNP -50V -100mA

N channel