Triode/MOS tube/transistor/module

UMH9N-F2-0000HF

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SMD transistor Transistor type: NPN Collector-emitter breakdown voltage (Vceo): 25V Collector current (Ic): 1.5A Power (Pd): 300mW

Configuration Single Type N-Ch VDS(V) 80 VGS(V) 20 ID(A)Max. 80 VGS(th)(v) - RDS(ON)(m?)@4.491V - Qg(nC)@4.5V - QgS(nC) 42 Qgd(nC) 75 Ciss(pF) 4800 Coss(pF) 1670 Crss(pF) 590

Transistor type: PNP Collector-emitter breakdown voltage (Vceo): 32V Collector current (Ic): 1A Power (Pd): 500mW 180-390 PNP, Vceo=-32V, Ic=-1A, hfe=180~390 , screen printing BAR

N-channel, 650V, 7.0A, 1.1?@10V

Semiconductor Transistor Field Effect Transistor MOS tube, TO-263, N channel, withstand voltage: 60V, current: 80A, 10V internal resistance (Max): 0.022Ω, power: 145W

NPN, Vceo=300V, Ic=0.3A, silk screen 1D

VCC: -50V VIN -12V +5V IO: -100MA ICM: -100MA PD: 150MW