Triode/MOS tube/transistor/module

N-channel 40V 18A

NPN/PNP, Vceo=50V, Ic=100mA

NPN 400V 8A

Application scenarios: washing machines, vacuums, massagers, solid state relays, AC motor speed control

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N channel

These N- and P-channel MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process, which is specially tailored to minimize on-state resistance while maintaining excellent switching performance. These devices are specifically designed to provide extremely low power consumption in an extremely small size, making them ideal for applications where the larger and more expensive TSSOP-8 and SSOP-6 encapsulation is not suitable.

P+P channel, -30V, -5.2A, 36mΩ@-10V

These dual N and P channel logic level enhancement mode field effect transistors are produced using a high cell density DMOS proprietary technology. This very high-density process is ideal for minimizing on-resistance. This device is designed to replace bipolar digital transistors and small signal MOSFETs in low voltage applications. Because no bias resistor is required, these dual digital FETs can replace several digital transistors with various bias resistor values.

Output type: adjustable Output voltage: 2.5V~36V Output current: 100mA Minimum cathode current adjustment: 1mA Working temperature: -25~+85@(TA) gear 0.5%