Triode/MOS tube/transistor/module
Commercial power MOSFETs for compact and efficient designs with 5x6mm flat lead encapsulation and high thermal performance.
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This P-channel JFET device is suitable for analog switch and chopper applications.
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This P-channel JFET device is suitable for analog switch and chopper applications.
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PJSEMI (flat crystal micro)
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Axelite (Arthur Wright)
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Dual N-channel, 30V, 7.5A/10A
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Infineon (Infineon)
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N-channel, 500V, 14A, 400mΩ@10V
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Infineon (Infineon)
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N-channel, 30V, 86A, 8mΩ@4.5V
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TI (Texas Instruments)
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CSD16321Q5 N-Channel NexFET Power MOSFET
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MSKSEMI (Mesenco)
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MOS tube type: 2 N-channel Drain-source voltage (Vdss): 60V Continuous drain current (Id): 300mA Power (Pd): 280mW On-resistance (RDS(on)@Vgs,Id): 1.8Ω@10V ,300mA
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TI (Texas Instruments)
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CSD15571Q2 20V N-Channel NexFET Power MOSFET, CSD15571Q2
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PJSEMI (flat crystal micro)
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TECH PUBLIC (Taizhou)
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HUASHUO (Huashuo)
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ST (STMicroelectronics)
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This N-channel MOSFET is produced using an advanced Power Trench process optimized for rDS(on), switching performance and robustness.
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Infineon (Infineon)
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CJ (Jiangsu Changdian/Changjing)
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