Triode/MOS tube/transistor/module

PNP, Vceo=-50V, Ic=-150mA, hfe=200~400

PNP Vceo=-50V Ic=-2A PC=1.5W switching transistor

Transistor Type: NPN Collector-Emitter Breakdown Voltage (Vceo): 65V Collector Current (Ic): 100mA Power (Pd): 200mW Collector Cutoff Current (Icbo): 100nA Collector-Emitter Saturation Voltage (VCE(sat) @Ic,Ib): 500mV@100mA, 5mA DC current gain (hFE@Ic,Vce): 110@2mA, 5V Characteristic frequency (fT): 100MHz Operating temperature: +150℃@(Tj) BC846AW-F2-0000HF

P-channel, -30V, -3.1A, 80mΩ@-10V

Transistor Type: NPN Collector-Emitter Breakdown Voltage (Vceo): 30V Collector Current (Ic): 3A Power (Pd): 500mW

Configuration Single Type N-Ch VDS(V) 60 VGS(V) 20 ID(A)Max. 50 VGS(th)(v) 1.8 RDS(ON)(m?)@4.475V 23 Qg(nC)@4.5V 28 QgS(nC) 3.5 Qgd(nC) 6.5 Ciss(pF) 1680 Coss(pF) 115 Crss(pF) 85

triac