Triode/MOS tube/transistor/module

NPN, Vceo=65V, Ic=100mA

This P-channel MOSFET is produced using the advanced PowerTrench process, which is specially adapted to minimize the on-resistance. This device is suitable for power management and load switching applications commonly found in notebook computers and portable battery packs.

NPN

This family of digital transistors is intended to replace a device and its external resistor bias network. The Bias Resistor Transistor (BRT) consists of a transistor and a monolithic bias network consisting of two resistors; a series base resistor and a base emitter resistor. The BRT integrates these components into one device, eliminating the need for these external components. Using BRT can reduce both system cost and board space.

N tube 100V/140A

1200V, 30mΩ SiC MOSFET