Triode/MOS tube/transistor/module

Configuration Single Type P-Ch VDS(V) -20 VGS(V) 12 ID(A)Max. -70 VGS(th)(v) -0.6 RDS(ON)(m?)@4.415V 6.8 Qg(nC) @4.5V 63 QgS(nC) 9.1 Qgd(nC) 13 Ciss(pF) 5783 Coss(pF) 520 Crss(pF) 445

N-channel, 60V, 7.6A, 25mΩ@10V

N channel

P channel -20V -3A

MOS, N-channel, 16N25, 250V, 16A, 0.25Ω(Max)

N-channel, 100V, 15A

30V, N-Channel Synchronous Buck NexFET MOSFET?, SON5x6 Power Block, 40A 8-LSON-CLIP -55 to 150

N-channel, 30V/80A, 5.5mΩ.

UniFETTM MOSFETs are a family of high voltage MOSFETs based on planar stripe and DMOS technologies. This MOSFET is suitable for lower on-resistance, better switching performance and higher avalanche energy strength. The reverse recovery performance of the body diode of UniFET FRFET MOSFETs is enhanced through lifetime control. Its trr is less than 100nsec, and its reverse dv/dt immunity is 15V/ns, while these two indicators of ordinary MOSFETs are above 200nsec and 4.5V/nsec respectively. Therefore, in some applications where the performance of the MOSFET body diode is important, it can eliminate additional components and improve system reliability. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power supplies, ATX, and electronic lamp ballasts.

NPN,Vceo=40V,Ic=600mA

The original factory changed the model, and the performance is exactly the same. The corresponding old model is: AO3420

Transistor Type: NPN Collector-Emitter Breakdown Voltage (Vceo): 25V Collector Current (Ic): 500mA Power (Pd): 300mW Collector Cutoff Current (Icbo): 100nA Collector-Emitter Saturation Voltage (VCE(sat) @Ic,Ib): 600mV@500mA HFE: 200-350