Optocoupler/LED/nixie tube/photoelectric device

The H11G1M and H11G2M are opto-Darlington optocouplers. These devices feature a GaAs infrared emitting diode coupled to a silicon Darlington junction phototransistor with an integrated base-emitter resistor for optimized high temperature characteristics.

The MOC3081M, MOC3082M, and MOC3083M devices contain a GaAs infrared light-emitting diode optically coupled to a monolithic silicon detector that performs the function of a voltage zero-crossing detection bidirectional triac driver.

The H11NX-M series features a high-speed integrated circuit detector optically coupled to an AlGaAs infrared light-emitting diode. The output incorporates a Schmitt trigger, providing hysteresis for noise immunity and pulse shaping. The detector circuit is optimized for operational simplicity and utilizes an open collector output for maximum application flexibility.

The H11G1M and H11G2M are opto-Darlington optocouplers. These devices feature a GaAs infrared emitting diode coupled to a silicon Darlington junction phototransistor with an integrated base-emitter resistor for optimized high temperature characteristics.