Diode/Bridge Rectifier

The Schottky diode uses the Schottky diode potential barrier principle and adopts a large-area metal-silicon power diode. The Schottky diode's advanced geometry employs oxide passivation and epitaxy with metal-covered contacts. The device is suitable for low-voltage, high-frequency rectification, or applications employing freewheeling and polarity protection diodes, where compact size and weight are critical to the system.

DC reverse withstand voltage (Vr): 45V Average rectified current (Io): 15A Forward voltage drop (Vf): 470mV@15A

SD101AW-F2-0000HF

Silicon carbideSBD1200V40A

Silicon carbideSBD1200V40A

DC reverse withstand voltage (Vr) Silicon carbide100 Average rectified current (Io) 3 Reverse current (Ir) 0.5