Diode/Bridge Rectifier

Schottky diode VF less than 0.85V, 100V Silicon carbide5AX2, common cathode

DC reverse withstand voltage (Vr): 100V Average rectified current (Io): 10A Forward voltage drop (Vf): 1.0V@10A Reverse current (Ir): 10uA@100V

1000V,1A

Diode configuration: Independent DC reverse withstand voltage (Vr): 650V Average rectified current (Io): 20A Forward voltage drop (Vf): 1.5V@20Adiode configuration: Independent DC reverse withstand voltage (Vr): 650V average Rectified current (Io): 25A Forward voltage drop (Vf): 1.5V@20A \n Silicon carbide (SiC) Schottky diode uses new technology, which can provide excellent switching performance and has higher reliability than silicon. No reverse recovery current, temperature independent switching characteristics and excellent thermal performance of Silicon carbide

Diode configuration: Independent DC reverse withstand voltage (Vr): 650V Average rectified current (Io): 20A Forward voltage drop (Vf): 1.5V@20Adiode configuration: Independent DC reverse withstand voltage (Vr): 650V average Rectified current (Io): 25A Forward voltage drop (Vf): 1.5V@20A \n Silicon carbide (SiC) Schottky diode uses new technology, which can provide excellent switching performance and has higher reliability than silicon. No reverse recovery current, temperature independent switching characteristics and excellent thermal performance of Silicon carbide

Diode configuration: Independent DC reverse withstand voltage (Vr): 20V Average rectified current (Io): 1A Forward voltage drop (Vf): 550mV@1A Reverse current (Ir): 300uA@20V DC reverse withstand voltage ( Vr): 20V Average rectified current (Io): 1A Forward voltage drop (Vf): 550mV@1A Reverse current (Ir): 0.3mA@20V -MS brand suffix

1000V, 1A, trr=500ns