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STD7NM80-1
Product Overview
Category
The STD7NM80-1 belongs to the category of power MOSFETs.
Use
It is commonly used in electronic circuits and power supply applications where efficient switching and control of high currents are required.
Characteristics
- Low on-resistance
- High switching speed
- Low gate charge
- High avalanche ruggedness
Package
The STD7NM80-1 is typically available in a TO-220 package, which provides good thermal performance and ease of mounting.
Essence
The essence of STD7NM80-1 lies in its ability to efficiently handle high power and current levels while maintaining low losses and high reliability.
Packaging/Quantity
It is usually supplied in reels or tubes, with quantities varying based on manufacturer and distributor specifications.
Specifications
- Drain-Source Voltage (VDS): 800V
- Continuous Drain Current (ID): 7A
- On-Resistance (RDS(on)): 1.15Ω
- Power Dissipation (PD): 40W
- Operating Temperature Range: -55°C to 150°C
Detailed Pin Configuration
The STD7NM80-1 typically has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)
Functional Features
- Fast switching speed for improved efficiency
- Low on-resistance for reduced power losses
- High avalanche ruggedness for increased reliability
- Low gate charge for enhanced control
Advantages and Disadvantages
Advantages
- High power handling capability
- Efficient switching performance
- Reliable operation under high voltage conditions
Disadvantages
- Higher cost compared to standard MOSFETs
- Sensitive to electrostatic discharge (ESD)
Working Principles
The STD7NM80-1 operates based on the principle of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the semiconductor material.
Detailed Application Field Plans
The STD7NM80-1 finds extensive use in various applications including: - Switching power supplies - Motor control - Lighting systems - Renewable energy systems
Detailed and Complete Alternative Models
Some alternative models to STD7NM80-1 include: - STP7NM80 - STD5NM50N - IRF840 - IRFP460
In conclusion, the STD7NM80-1 power MOSFET offers high-performance characteristics suitable for a wide range of power electronics applications, making it a versatile choice for engineers and designers seeking efficient and reliable power control solutions.
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Seznam 10 běžných otázek a odpovědí souvisejících s aplikací STD7NM80-1 v technických řešeních
What is the STD7NM80-1?
- The STD7NM80-1 is a high voltage N-channel Power MOSFET designed for various applications such as switch mode power supplies, lighting, and motor control.
What is the maximum drain-source voltage of the STD7NM80-1?
- The maximum drain-source voltage of the STD7NM80-1 is 800V.
What is the continuous drain current rating of the STD7NM80-1?
- The continuous drain current rating of the STD7NM80-1 is 7A.
What are the typical applications of the STD7NM80-1?
- Typical applications include flyback and forward converters, resonant converters, motor drives, and electronic lamp ballasts.
What is the on-state resistance (RDS(on)) of the STD7NM80-1?
- The on-state resistance of the STD7NM80-1 is typically around 1.15 ohms.
What is the gate threshold voltage of the STD7NM80-1?
- The gate threshold voltage is typically around 3V.
Is the STD7NM80-1 suitable for high frequency switching applications?
- Yes, the STD7NM80-1 is suitable for high frequency switching due to its low input and output capacitance.
What are the thermal characteristics of the STD7NM80-1?
- The STD7NM80-1 has a low thermal resistance and is designed for efficient heat dissipation.
Does the STD7NM80-1 have built-in protection features?
- The STD7NM80-1 offers built-in protection against overcurrent and overtemperature conditions.
Where can I find detailed technical specifications and application notes for the STD7NM80-1?
- Detailed technical specifications and application notes can be found in the datasheet provided by the manufacturer or distributor of the component.